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• W2034502202 abstract "Abstract The effect of post-growth annealing of epitaxial gallium phosphide grown on silicon substrates using gas-source molecular-beam epitaxy is described. The epitaxial layers were grown at substrate temperatures ranging from 250 to 550 °C. After optimizing the growth temperature, the prepared films were thermally annealed. Two thermal annealing methods are compared: annealing at a constant temperature and step-graded annealing, in which the temperature is raised by a constant rate per unit time. The effect of the thermal annealing on the crystal structure was studied by characterizing the epilayer using reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) measurements, and scanning-electron microscopy (SEM). It was found that after thermal annealing, the epilayer exhibited a reconstructed RHEED pattern, and its quality was much improved." @default.
• W2034502202 created "2016-06-24" @default.
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• W2034502202 date "2015-06-01" @default.
• W2034502202 modified "2023-09-23" @default.
• W2034502202 title "Thermal annealing effect on the structural properties of epitaxial growth of GaP on Si substrate" @default.
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• W2034502202 doi "https://doi.org/10.1016/j.jcrysgro.2015.02.090" @default.
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