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• W2034574118 endingPage "1649" @default.
• W2034574118 startingPage "1641" @default.
• W2034574118 abstract "A SiGe HBT having a fmax higher than fT has been fabricated using a production CVD reactor which allows SiH2Cl2-based Si collector epi-growth at high rate as well as SiH4-based SiGe base epi-growth at low rate. Transistor design together with process integration was focused on lowering the extrinsic base resistance and the collector-base capacitance. To this purpose, a TiSi2 layer with a sheet resistance of 1.3 Ω/sq was used as a base electrode and a selectively implanted collector was utilized. For the base layer, an undoped-Si (300 Å)/p-SiGe (200 Å, NA=4.4×1018 cm−3, linearly-graded Ge composition from 0 to 0.19)/undoped-Si0.81Ge0.19 (110 Å)/undoped-Si (300 Å) multilayer was deposited on a LOCOS-patterned wafer. In order to form the emitter-base junction and to activate the arsenic dopants in the polysilicon-emitter, rapid thermal annealing (RTA) at 900°C for 20 s was performed only one time so that outdiffusion of the boron in the base could be suppressed. The collector and base currents are shown nearly ideal. We obtained a fT of 37 GHz which is near the theoretical limit imposed by BVCEO and a fmax of 42 GHz. The base resistance and the collector-base capacitance extracted from measured S-parameters have a value of 37 Ω and 27.2 fF, respectively." @default.
• W2034574118 created "2016-06-24" @default.
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• W2034574118 date "1998-09-01" @default.
• W2034574118 modified "2023-10-16" @default.
• W2034574118 title "A 42-GHz (fmax) SiGe-base HBT using reduced pressure CVD" @default.
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• W2034574118 doi "https://doi.org/10.1016/s0038-1101(98)00110-5" @default.
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