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• W2034609821 endingPage "080215" @default.
• W2034609821 startingPage "080215" @default.
• W2034609821 abstract "We discuss the electron mobility (µ) of a two-dimensional electron gas (2DEG) confined at the Mg x Zn 1- x O/ZnO heterointerface grown by molecular-beam epitaxy. With increasing x from 0.05 to 0.2, the electron density ( n ) was enhanced and µ was suppressed due to interface roughness or alloy disorder scattering. By the optimization of growth conditions, in particular growth rate, ionized impurity scattering in the ZnO channel could be reduced significantly. With tuning n by a gate voltage on top-gated Hall-bar devices, the peak µ at 2 K was enhanced to 130,000 cm 2 V -1 s -1 at n = 3×10 11 cm -2 ." @default.
• W2034609821 created "2016-06-24" @default.
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• W2034609821 date "2011-08-01" @default.
• W2034609821 modified "2023-10-17" @default.
• W2034609821 title "Improvement of Electron Mobility above 100,000 cm²V^-1s^-1in Mg_xZn_1-xO/ZnO Heterostructures" @default.
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• W2034609821 doi "https://doi.org/10.1143/jjap.50.080215" @default.
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