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- W2034640105 abstract "We report on the magnetic and transport properties of [IrMn8/CoFe1.5]/AlOx1.2/[CoFe1/NiFe5/CoFe1]/AlOx1.2/[CoFe1.5/IrMn8] (nanometer) double magnetic tunnel junctions (DMTJs) deposited by magnetron sputtering and patterned using optical lithography. The tunnel magnetoresistance (TMR) versus the bias voltage presents a symmetric characteristic, which indicates a good and similar quality of both AlOx barriers. The junctions show a resistance-area product about 35 kΩ μm2, a high TMR at room temperature of 49.5%, and a high bias voltage at which the TMR signal is decreased to half of its maximum value, V1/2DMTJ=1.33 V. Both hard magnetic layers are rigid in negative field up to 51.5 kA/m, while the coercive field of the soft layer is around 1.1 kA/m. The large difference of coercive fields, combined with the large TMR and V1/2, makes these systems very promising for spin electronic devices." @default.
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- W2034640105 date "2003-08-04" @default.
- W2034640105 modified "2023-09-26" @default.
- W2034640105 title "Low tunnel magnetoresistance dependence versus bias voltage in double barrier magnetic tunnel junction" @default.
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- W2034640105 doi "https://doi.org/10.1063/1.1597964" @default.
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