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- W2034643821 abstract "We attempted to obtain an epitaxial MnSiγ (γ∼1.7) film on R-sapphire, i.e., Sapphire(1102), substrate by pulsed laser deposition. We prepared MnSiγ films by changing the substrate temperature gradient. It was found that the MnSiγ film, whose temperature gradient in a substrate is parallel to Sapphire[1120], could be grown epitaxially on the substrate. The epitaxial relationship was MnSiγ(1000)[0010] ∥ Sapphire(1102)[1120]. The thermoelectric properties of the epitaxial MnSiγ film were different in the a- and c-axes, reflecting the anisotropic MnSiγ crystal structure. The anisotropic thermoelectric properties are discussed in terms of the electronic structure." @default.
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- W2034643821 date "2012-04-12" @default.
- W2034643821 modified "2023-09-26" @default.
- W2034643821 title "Anisotropic Thermoelectric Properties of MnSi$_{gamma}$ Film Prepared on R-Sapphire" @default.
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- W2034643821 doi "https://doi.org/10.1143/apex.5.055501" @default.
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