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- W2034658399 abstract "Fixed RF resistor based on AlN substrate and RuO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> resistive film investigated. AlN substrate is most commonly used material for high power RF resistor recently because of low dielectric loss, high thermal conductivity and environmental problem. RuO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> based resistive film is also most widely used resistive film material because of low TCR and chemical stability. But low adhesion strength to AlN substrate is well-known problem of reliability concerns. Reliability tests were configured to evaluate immunity to each stress. Failure analysis for failed specimen was executed nondestructively and destructively. Result of analysis revealed that CTE mismatch, diffusion between metal electrode and resistive film and adhesion strength were major stress factors of the failures." @default.
- W2034658399 created "2016-06-24" @default.
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- W2034658399 date "2009-12-01" @default.
- W2034658399 modified "2023-09-26" @default.
- W2034658399 title "Failure mode of high power fixed RF resistor of RuO<inf>2</inf> thick film on AlN substrate" @default.
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- W2034658399 doi "https://doi.org/10.1109/apmc.2009.5384506" @default.
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