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- W2034663281 abstract "Optical writing and electrical erasing organic phototransistor memory (OPTM) is a promising photoelectric device for its novel integration of photosensitive and memory properties. The performance of OPTM can be influenced by the trap density of the gate dielectric layer. Here, we occupy tantalum pentoxide (Ta2O5), which is a prospective material in microelectronics field, as the gate dielectric. By increasing the oxygen content from 10% to 50% during the fabrication process of Ta2O5, it is found that the mobility and the photoresponsivity of OPTMs are significantly enhanced about 10 times and the retention time is greatly increased to 8.4 × 104 s as well. As far as we know, this is the first example that the modulation of oxygen content can improve the OPTM performance. Furthermore, the change of the oxygen content gives rise to the alteration of the threshold voltage and memory window, of which the absolute values of all the threshold voltage are below 5 V which is low enough to reduce the power consumption. It is found that the oxygen content can influence the surface roughness and surface energy of Ta2O5 films, which alter the nucleation and orientation of semiconductor layers, change the contact resistance and modulate the electron trap density in the Ta2O5 films." @default.
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- W2034663281 date "2014-07-01" @default.
- W2034663281 modified "2023-10-17" @default.
- W2034663281 title "The effect of oxygen content on the performance of low-voltage organic phototransistor memory" @default.
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- W2034663281 doi "https://doi.org/10.1016/j.orgel.2014.03.017" @default.
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