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• W2034665199 abstract "Radiation-induced charge and interface state generation are measured in MOS capacitors with steam oxide layers typical of standard field oxides and at low fields (<0.1 MV/cm) typical of device applications. Interface state buildup occurs primarily through a prompt process and most of the states are slow. Free electron-hole pair yield at low fields is reduced from that previously measured in thinner (gate) oxides." @default.
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• W2034665199 date "1984-01-01" @default.
• W2034665199 modified "2023-10-10" @default.
• W2034665199 title "Charge and Interface State Generation in Field Oxides" @default.
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• W2034665199 doi "https://doi.org/10.1109/tns.1984.4333495" @default.
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