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• W2034677881 abstract "The resistive switching characteristics of Pt/TiO 2 /W devices in a submicrometre via-hole structure are investigated. TiO 2 film is grown by the sol–gel spin coating technique. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO 2 interface limits electron injection under reverse bias resulting in a rectification ratio of >60 at 2 V in the low-resistance state. The switching mechanism in our device can be interpreted as an anion migration-induced redox reaction at the tungsten bottom electrode (W). The rectifying effect can significantly reduce the sneak path current in a crossbar array and provide a feasible way to achieve high memory density." @default.
• W2034677881 created "2016-06-24" @default.
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• W2034677881 date "2010-11-25" @default.
• W2034677881 modified "2023-09-23" @default.
• W2034677881 title "Asymmetric bipolar resistive switching in solution-processed Pt/TiO₂/W devices" @default.
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• W2034677881 doi "https://doi.org/10.1088/0022-3727/43/49/495104" @default.
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