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- W2034678339 abstract "Plasma-free defect passivation is achieved on polycrystalline silicon thin-film transistors fabricated below 150°C by annealing and extracting H from SiNx:H interlayer dielectric. By annealing at 250°C without a plasma application, VT and μFE were improved from 11.5Vto3.5V and from 86cm2∕Vsto212cm2∕Vs, respectively. Improvement in performance is attributed to defect passivation by H diffusing out from SiNx:H. Dangling bonds and strained bonds can be acceptably passivated around 170°C, and 205°C, respectively. The activation energy for the diffusion of H into polycrystalline silicon was estimated to be 0.87eV." @default.
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- W2034678339 date "2006-02-13" @default.
- W2034678339 modified "2023-10-17" @default.
- W2034678339 title "Plasma-free hydrogenation of ultralow-temperature polycrystalline silicon thin-film transistors with SiNx:H as interlayer dielectric" @default.
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- W2034678339 doi "https://doi.org/10.1063/1.2178407" @default.
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