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- W2034678827 abstract "Abstract The device industry is entering a period characterized by the introduction of a number of new materials associated with multilayer structures. These structures are themselves being developed for use in sub-micron VLSI. A variety of new compounds and alloys such as Ti/W, nitrides and silicides are being introduced as barrier layers to overcome problems of electromigration, hillock formation and interfacial diffusion. The range of III–V compounds involving Ga, As, In, Sb, Al, P, etc. is also being extended and these are the materials of choice in optoelectronic devices (lasers, waveguides, etc.) as well as having important applications in high speed VLSI technology. Layered structures of new materials are also to be found in quantum well and superllatice systems, in strained-layer growth of unipolar and bipolar heterostructure devices (e.g. Si-Ge alloys) and in superconducting films. These advanced materials bring with them the necessity for developing new etching techniques and processes. Increasingly the emphasis must be upon process control during etching and accurately controllable etch characteristics. This paper will centre on this theme with special reference to end-point detection using both optical emission spectroscopy and mass-spectrometry. The latter is carried out with a probe technique which we have developed in our laboratories at Bristol. Examples will be taken from silicon based and III–V based materials (e.g. InP, GaAs), SiGe alloys in layered structures and superconducting films on all of which topics we have work currently in progress." @default.
- W2034678827 created "2016-06-24" @default.
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- W2034678827 date "1990-01-01" @default.
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- W2034678827 title "Etch diagnostics for new III–V and other semiconductors" @default.
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- W2034678827 doi "https://doi.org/10.1016/0042-207x(90)90092-d" @default.
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