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- W2034682021 abstract "Abstract In this paper, successful fabrication of (110)-oriented ultrathin compressively strained GOI substrates by using Ge condensation method is demonstrated, for the first time. An initial structure of Si/Si0.7Ge0.3 (40 nm)/(110) SOI structure was fabricated by MBE at 100 °C and high temperature oxidation was carried out to form (110) surface pure GOI structures. It was confirmed from the thickness of the fabricated GOI structures (12 nm) that the total amount of Ge atoms preserves during the condensation. The surface orientation was confirmed to be the (110)-oriented by the XRD method." @default.
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- W2034682021 date "2008-11-01" @default.
- W2034682021 modified "2023-10-09" @default.
- W2034682021 title "(110) Ultrathin GOI layers fabricated by Ge condensation method" @default.
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- W2034682021 doi "https://doi.org/10.1016/j.tsf.2008.08.102" @default.
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