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- W2034685613 abstract "CuInSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> absorber films were fabricated by annealing electrodeposited stacks of copper selenide on indium selenide. The inert background gas pressure during annealing was varied and the absorber composition, grain size and structure characterized. X-ray diffraction verified the formation of CuInSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> . Compared to one-step electrodeposited CuInSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> precursors the absorbers obtained from binary selenide precursors show larger grain size and improved crystal quality. Grain size increases further with higher annealing pressure and electronic quality improves as can be seen from an exciton transition in photoluminescence. Completed devices showed a best efficiency of 5.0%." @default.
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- W2034685613 date "2011-06-01" @default.
- W2034685613 modified "2023-10-16" @default.
- W2034685613 title "Pressure dependent synthesis of CuInSe<inf>2</inf> thin film solar cells from electrodeposited binary selenide stacks" @default.
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- W2034685613 doi "https://doi.org/10.1109/pvsc.2011.6185968" @default.
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