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• W2034689246 abstract "Ru and RuO 2 thin films were prepared by RF magnetron sputtering. The crystalline structure and electrical properties of these films were investigated. Reactive sputtering of a ruthenium metal target was carried out in a mixed gas of argon and oxygen at 580° C. Total pressure ( P O 2 + P Ar ) was controlled to maintain a constant pressure of 1 Pa. The RuO 2 single phase could be obtained when P O 2 was 0.5 Pa and the deposition rate was about 30 nm/min. The resistivity of the 290 nm-thick RuO 2 thin films deposited on SiO 2 (1000 nm)/Si was 54.9 µ Ω· cm. However, the resistivity increased with decreasing film thickness. Fatigue resistance of (Pb, La)TiO 3 thin films with RuO 2 as top and bottom electrodes was improved compared to the films on Pt electrodes." @default.
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• W2034689246 date "1994-09-01" @default.
• W2034689246 modified "2023-10-16" @default.
• W2034689246 title "Preparation and Properties of Ru and RuO₂ Thin Film Electrodes for Ferroelectric Thin Films" @default.
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• W2034689246 doi "https://doi.org/10.1143/jjap.33.5223" @default.
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