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- W2034753663 abstract "Transmission electron microscopic observations have been made on dislocations generated in high-dose (1×1015–3×1016 ions/cm2) phosphorus-implanted (111) silicon wafers followed by 1100 °C isothermal annealing in inert (dry N2) and oxidizing (wet O2) atmospheres. The generation and movement of dislocations in a wafer are strongly influenced by atmospheres during annealing. In dry-N2 annealing, the critical ion dose for generation of dislocation networks is 1×1016 ions/cm2, which is three times higher than that in wet-O2 annealing. Also, dislocations move down to greater depths in a wafer after annealing in a wet-O2 atmosphere, while in dry-N2 annealing their location in a wafer is usually unchanged." @default.
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- W2034753663 date "1975-10-15" @default.
- W2034753663 modified "2023-09-26" @default.
- W2034753663 title "Tertiary defects in phosphorus-implanted silicon" @default.
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- W2034753663 doi "https://doi.org/10.1063/1.88518" @default.
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