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• W2034762440 abstract "We investigate photoluminescence from reproducible Li-doped p-type ZnO thin films prepared by dc reactive magnetron sputtering. The LiZn acceptor state, with an energy level located at 150meV above the valence band maximum, is identified from free-to-neutral-acceptor transitions. Another deeper acceptor state located at 250meV emerges with the increased Li concentration. A broad emission centered at 2.96eV is attributed to a donor-acceptor pair recombination involving zinc vacancy. In addition, two chemical bonding states of Li, evident in x-ray photoelectron spectroscopy, are probably associated with the two acceptor states observed." @default.
• W2034762440 created "2016-06-24" @default.
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• W2034762440 date "2006-07-24" @default.
• W2034762440 modified "2023-10-16" @default.
• W2034762440 title "Identification of acceptor states in Li-doped p-type ZnO thin films" @default.
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• W2034762440 doi "https://doi.org/10.1063/1.2236225" @default.
• W2034762440 hasPublicationYear "2006" @default.
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