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- W2034772180 abstract "Single crystalline thin films of In2O3(ZnO)5 were grown by a novel solid state diffusion technique using a ZnO epitaxial layer as solid template. Crystal quality of the film was evaluated by high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). Multilayered films composed of amorphous In2O3(ZnO)4 and epitaxial ZnO were grown on (111) yttrium-stabilized-zirconia (YSZ) by a pulsed-laser-deposition method, followed by annealing the films fully covered by YSZ plate at 1450 °C in air. HR-XRD measurement revealed In2O3(ZnO)5 to be a single crystalline film. Sharp diffraction peaks of (000l) due to superlattices were seen in the out-of-plane HR-XRD pattern. Out-of-plane and in-plane orientations of the film and the substrate were In2O3(ZnO)5 (0001)//YSZ (111) and In2O3(ZnO)5 (112̄0)//YSZ(11̄0), respectively. Step and terrace structure was clearly observed in an AFM image of the In2O3(ZnO)5 film." @default.
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- W2034772180 date "2002-05-01" @default.
- W2034772180 modified "2023-09-23" @default.
- W2034772180 title "Novel film growth technique of single crystalline In2O3(ZnO)m (m=integer) homologous compound" @default.
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- W2034772180 doi "https://doi.org/10.1016/s0040-6090(02)00204-3" @default.
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