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• W2034777158 endingPage "13624" @default.
• W2034777158 startingPage "13618" @default.
• W2034777158 abstract "The transition-metal titanium (Ti) as an extrinsic impurity in the wide-band-gap semiconductor silicon carbide (SiC) is studied, applying deep-level transient spectroscopy on ${mathrm{Ti}}^{+}$-implanted 4H and 6H SiC epitaxial layers. Two Ti centers with energy positions ${mathrm{E}}_{mathrm{C}}$-(117ifmmodepmelsetextpmfi{}8) meV and ${mathrm{E}}_{mathrm{C}}$-(160ifmmodepmelsetextpmfi{}10) meV, respectively, are observed in the 4H polytype. These levels are assigned to the ionized Ti acceptor ${mathrm{Ti}}^{3+}$(${3mathrm{d}}^{1}$) residing at hexagonal and cubic Si lattice sites. For the 6H SiC polytype, the Ti acceptor levels are assumed to be resonant in the conduction band." @default.
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• W2034777158 date "1997-05-15" @default.
• W2034777158 modified "2023-10-14" @default.
• W2034777158 title "Electrical properties of the titanium acceptor in silicon carbide" @default.
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• W2034777158 doi "https://doi.org/10.1103/physrevb.55.13618" @default.
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