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- W2034779600 abstract "A very small amount of pre-deposited C on a Si substrate causes island formation after epitaxial growth of less than 2 monolayers Ge. These C-induced Ge dots can be as small as 10 nm in lateral size and 1 nm in height. Their areal density is 1011 cm−2. Intense photoluminescence signal from these small Ge quantum dots is observed reaching a maximum for 2.1±0.3 monolayers of Ge. In the initial stages of island formation, the optical transition of the wetting layer is blue-shifted by strain compensation effects. We propose spatially indirect mechanisms of radiative recombination between electrons confined in the underlying wetting layer and holes confined in the Ge islands." @default.
- W2034779600 created "2016-06-24" @default.
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- W2034779600 date "1997-10-20" @default.
- W2034779600 modified "2023-10-09" @default.
- W2034779600 title "Formation of carbon-induced germanium dots" @default.
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- W2034779600 doi "https://doi.org/10.1063/1.120072" @default.
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