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- W2034784674 abstract "Although characterization of hydrogen (H) in silicon (Si) is of interest from a device physics viewpoint, this is difficult using conventional analytical methods. In this study, deuterium (D) was used as a proxy for H, and the distribution of implanted D-ions in Si(100) was investigated using atom probe tomography (APT). D can be distinguished from the residual H gas in the APT chamber. The APT results indicated that D tended to form clusters, whose distribution was similar to that of 311 defects identified using transmission electron microscopy, suggesting that the D ions segregate in the vicinity of these defects." @default.
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- W2034784674 date "2013-06-01" @default.
- W2034784674 modified "2023-09-25" @default.
- W2034784674 title "Three-Dimensional Characterization of Deuterium Implanted in Silicon Using Atom Probe Tomography" @default.
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- W2034784674 doi "https://doi.org/10.7567/apex.6.066602" @default.
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