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• W2034797729 abstract "Well-controlled population of dislocations are introduced in 4H-SiC by bending in cantilever mode and annealing between 400 and 700°C. The introduced defects consist of double stacking faults, each bound by a pair of 30° Si(g) partial dislocations, and the expansion of which is asymmetric. The velocity of each individual 30° Si(g) pair is directly measured as a function of stress and temperature on the surface of samples etched after deformation. The activation energies of the 30° Si(g) partial dislocation pairs are strongly stress dependent, ranging between 1.25 and 1.7eV. These values are lower than the ones derived from plasticity experiments. This is probably because 30° Si(g) pairs and double stacking faults are generated in N-doped 4H-SiC (N=2×1018cm−3), with their development being promoted by quantum well action." @default.
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• W2034797729 date "2007-06-01" @default.
• W2034797729 modified "2023-10-18" @default.
• W2034797729 title "30° Si(g) partial dislocation mobility in nitrogen-doped 4H-SiC" @default.
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• W2034797729 doi "https://doi.org/10.1063/1.2745266" @default.
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