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- W2034798640 abstract "Optical properties of Ni+ irradiated and thermally annealed InGaAs/GaAs multiple quantum wells and semiconductor saturable absorber mirrors (SESAMs) have been studied using photoluminescence (PL) and non-linear reflectivity measurements. Rapid decrease of PL intensity and lifetime with increasing irradiation dose was accompanied by undesirable degradation of the non-linear optical properties of SESAMs. However, some of the irradiation-created defects could be removed and the non-linear optical properties improved by rapid thermal annealing. The combination of ion irradiation and annealing provided a selective method for controlling the absorption recovery time of SESAMs while preserving the non-linear properties. Irradiation with 1012 cm−2 of 6 MeV Ni+ ions and 1 s annealing at 400°C led to an absorption recovery time of ~1 ps while the modulation depth, the non-saturable losses and the saturation fluence were all close to their as-grown values." @default.
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- W2034798640 date "2005-03-18" @default.
- W2034798640 modified "2023-09-23" @default.
- W2034798640 title "Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors" @default.
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- W2034798640 doi "https://doi.org/10.1088/0022-3727/38/7/004" @default.
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