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- W2034805771 abstract "Zinc-blende BxGa1−xAs alloys have been successfully grown on exactly oriented (0 0 1)GaAs substrates using triethylboron, trimethylgallium and arsine sources. The growth has been accomplished in a vertical low-pressure metalorganic chemical vapor deposition (LP-MOCVD) reactor. Boron incorporation behaviors have been extensively studied as a function of growth temperature and gas-phase boron mole fraction. The evolution of surface morphology was also observed. The maximum boron composition of 5.8% is obtained at the optimum growth temperature of 580 °C. RMS roughness over the surface area of 1×1 μm2 is only 0.17 nm at such growth conditions. Based on the experimental results, it has been clearly shown that boron incorporation will decrease significantly at higher temperature (>610 °C) or at much lower temperature (⩽550 °C)." @default.
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- W2034805771 date "2008-12-01" @default.
- W2034805771 modified "2023-09-23" @default.
- W2034805771 title "LP-MOCVD growth of ternary BxGa1−xAs epilayers on (001)GaAs substrates using TEB, TMGa and AsH3" @default.
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- W2034805771 doi "https://doi.org/10.1016/j.mejo.2008.02.017" @default.
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