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• W2034808768 abstract "To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET's effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs." @default.
• W2034808768 created "2016-06-24" @default.
• W2034808768 creator A5035325040 @default.
• W2034808768 creator A5071074171 @default.
• W2034808768 date "2013-03-01" @default.
• W2034808768 modified "2023-10-09" @default.
• W2034808768 title "High-Performance Silicon Nanotube Tunneling FET for Ultralow-Power Logic Applications" @default.
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• W2034808768 doi "https://doi.org/10.1109/ted.2013.2243151" @default.
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