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• W2034844546 abstract "Light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced chemical vapor deposition followed by low temperature (500–900°C) annealing. The optical properties of SRN films were studied by micro-Raman and photoluminescence spectroscopy and indicate the presence of small Si clusters characterized by broad near-infrared emission, large absorption/emission Stokes shift, and nanosecond recombination. Our results are supported by first-principles simulations indicating that N atoms bonded to the surface of nanometer Si clusters play a crucial role in the emission mechanism of SRN films. Light emission from SRN systems can provide alternative routes towards the fabrication of optically active Si devices." @default.
• W2034844546 created "2016-06-24" @default.
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• W2034844546 date "2006-05-01" @default.
• W2034844546 modified "2023-10-18" @default.
• W2034844546 title "Light emission from silicon-rich nitride nanostructures" @default.
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• W2034844546 doi "https://doi.org/10.1063/1.2191956" @default.
• W2034844546 hasPublicationYear "2006" @default.
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