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• W2034846409 abstract "Line shape modifications induced by thermal treatment in the optical absorption and electron paramagnetic resonance (EPR) signals associated with the ${E}_{ensuremath{gamma}}^{ensuremath{'}}$ center are experimentally investigated in various types of $ensuremath{gamma}$-irradiated amorphous silicon dioxide $(atext{ensuremath{-}}mathrm{Si}{mathrm{O}}_{2})$. The $g$ values of the EPR main resonance line of the ${E}_{ensuremath{gamma}}^{ensuremath{'}}$ center show a shift correlated with the peak energy variation of the absorption band at about $5.8phantom{rule{0.3em}{0ex}}mathrm{eV}$ associated with this defect. These spectroscopic changes are proposed to originate from structural modifications of the defect environment. The correlation is theoretically explained considering that the spin-orbit interaction couples the $g$-tensor's elements and the electronic energy level distribution of the defect. Our results suggest that the optical band at $5.8phantom{rule{0.3em}{0ex}}mathrm{eV}$ is due to an intracenter electron promotion from the $mathrm{Si}mathrm{O}$ bonding states to the dangling bond of the $mathrm{O}{mathrm{Si}}^{ifmmodebulletelsetextbulletfi{}}$ moiety." @default.
• W2034846409 created "2016-06-24" @default.
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• W2034846409 date "2008-05-16" @default.
• W2034846409 modified "2023-09-25" @default.
• W2034846409 title "Optical absorption band at<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:mn>5.8</mml:mn><mml:mspace width=0.3em /><mml:mi>eV</mml:mi></mml:mrow></mml:math>associated with the<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msubsup><mml:mi>E</mml:mi><mml:mi>γ</mml:mi><mml:mo>′</mml:mo></mml:msubsup></mml:math>centers in amorphous silicon dioxide: Optical absorption and EPR measurements" @default.
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• W2034846409 doi "https://doi.org/10.1103/physrevb.77.195206" @default.
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