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- W2034851049 startingPage "1028" @default.
- W2034851049 abstract "Electronic states of steps on the Si(001) surface are calculated by the DV-Xα method. The calculated steps are the unreconstructed S b , reconstructed S b , unreconstructed S a , buckled S a , and dimer-chain S a steps. The dangling bonds near the steps interact with each other. The dangling-bond levels appear in the middle of the band gap. The charge distribution of dangling-bond levels of the dimer on the upper terrace of the unreconstructed S a step is slightly asymmetric, although the dimer is symmetric. The charge distribution of the buckled S a step where the dimer is tilted by 10 degrees is buckled, but its shape does not reproduce the STM image. A new model of the S a step is proposed. The atomic structure of step edge of the higher terrace is a zig-zag chain of dimers. The charge distribution of the dimer-chain S a step well reproduces the large buckling of the STM image." @default.
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- W2034851049 date "1991-03-15" @default.
- W2034851049 modified "2023-09-25" @default.
- W2034851049 title "Electronic States of Si(001) Stepped Surface" @default.
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- W2034851049 doi "https://doi.org/10.1143/jpsj.60.1028" @default.
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