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- W2034851720 abstract "Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposited (ALD) LaO/HfZrO stacked gate dielectrics were fabricated. The experimental results reveal that the equivalent oxide thickness (EOT) is 0.65 nm, and the gate leakage current density (Jg) is only 1.9 A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . The main current conduction mechanisms are Schottky emission, Poole-Frankel emission, and Fowler-Nordheim tunneling. The barrier height (Φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>B</sub> ) is estimated to be about 1.07 eV at TaC and HfZrLaO interface." @default.
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- W2034851720 date "2011-06-01" @default.
- W2034851720 modified "2023-10-18" @default.
- W2034851720 title "Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films" @default.
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- W2034851720 doi "https://doi.org/10.1109/inec.2011.5991686" @default.
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