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- W2034853050 abstract "Mechanisms of the resistivity, ρ, of single crystal samples oriented along the [100] (No 1), [010] (No 2) and [001] (No 3) axes of anisotropic semiconductor p-CdSb doped with 2 at.% of Ni are investigated. In zero magnetic field the Mott type variable-range hopping (VRH) conductivity is observed in No 2 and the Shklovskii‐Efros type in No 1 and No 3 at T 2. 5K . The magnetoresistance (MR) of the samples obeys the law ln ρ ∼ B 2 up to B ∼ 6T . However, the temperature dependence of MR gives evidence for the Mott-VRH conductivity in No 1 at T 4.2 K and the nearest-neighbor hopping conductivity in No 2 between T = 3 and 4.2 K and in No 3 between 1.5 and 4.2 K. From the experimental data the values of the localization radius and dielectric permittivity and details of their critical behavior near the metal‐insulator transition, as well as the widths and the values of the density of the localized states, the acceptor energies, their concentrations and the anisotropy coefficients, are obtained. (Some figures in this article are in colour only in the electronic version)" @default.
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- W2034853050 date "2008-06-26" @default.
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- W2034853050 title "Hopping conductivity of Ni-doped p-CdSb" @default.
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- W2034853050 doi "https://doi.org/10.1088/0953-8984/20/29/295204" @default.
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