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- W2034879551 abstract "Measurements of the differential capacitance of evaporated gold Schottky barriers on laboratory-grown, boron-doped semiconducting diamonds have been obtained for the first time as functions of reverse-bias voltage, frequency, and temperature. The data are analyzed on the basis of a model which includes the effects of long time constants for hole capture from the deep (boron) level, as well as previously unobserved effects due to the series resistance of the bulk. The barrier height at 300°K is found to be 1·73 ± 1·10 eV, in good agreement with the ‘one-third band gap’ value of Mead and Spitzer. Excellent correlation is found between optical transmission measurements and the C-V analysis for the uncompensated boron concentration, indicating that all of the optically observable dopant is electrically active. By fitting the model with two adjustable parameters at room temperature, good agreement is obtained between measured and calculated capacitance over two and a half decades as a function of temperature. The analysis indicates that the activation energy of the acceptor level is 0·26–0·37 eV for the samples studied, while the associated capture cross-sections are 0·9–2·0 × 10−17 cm2." @default.
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- W2034879551 date "1973-09-01" @default.
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- W2034879551 title "The characteristics of Schottky barriers on laboratory grown semiconducting diamonds" @default.
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- W2034879551 doi "https://doi.org/10.1016/0038-1101(73)90196-2" @default.
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