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- W2034879998 abstract "Abstract Surface defects created by 20 keV Xe ion irradiation of Ge(1 1 1) are investigated by scanning tunneling microscopy (STM). One bilayer deep vacancy islands and surface craters with a depth of more than two bilayers are observed. The creation of the surface craters, which is caused by thermal spike of 20 keV Xe ions, is an unusual event with a yield of ∼0.1%. The areal density of surface craters increases linearly with increasing ion fluence at 215 °C and increases sublinearly with increasing ion fluence at 275 °C." @default.
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- W2034879998 date "2005-01-01" @default.
- W2034879998 modified "2023-09-24" @default.
- W2034879998 title "Surface defects created by 20keV Xe ion irradiation of Ge(111)" @default.
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- W2034879998 doi "https://doi.org/10.1016/j.susc.2004.10.026" @default.
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