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- W2034897162 abstract "This report deals with the epitaxial growth of very thin films of CoSi2 on Si(111). The growth mechanisms, the structural and electronic properties of various silicide phases observed during the interface formation are described on the basis of results obtained by LEED, AES, XPS, ARUPS and EELFS techniques." @default.
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- W2034897162 date "1986-03-01" @default.
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- W2034897162 title "Structural and electronic properties of CoSi2 epitaxially grown on Si(111)" @default.
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- W2034897162 doi "https://doi.org/10.1016/0167-2584(86)90438-x" @default.
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