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• W2034905828 abstract "HfO2 films are not easily deposited on hydrophobic self-assembled monolayer (SAM)-passivated surfaces. However, in this study, we deposited HfO2 films on a tetradecyl-modified SAM with a Ge surface using atomic layer deposition at 350 °C. A slightly thinner HfO2 film thickness was obtained on the tetradecyl-modified SAM passivated samples than that typically obtained on GeOx-passivated samples. The resulting electrical properties are explained by the physical thickness and stoichiometry of the interfacial layer." @default.
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• W2034905828 date "2010-05-01" @default.
• W2034905828 modified "2023-10-17" @default.
• W2034905828 title "Atomic layer deposition of HfO2 on self-assembled monolayer-passivated Ge surfaces" @default.
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• W2034905828 doi "https://doi.org/10.1016/j.tsf.2009.11.015" @default.
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