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- W2034908046 abstract "A small band-gap carbon nanotube (SBG CNT) with a large diameter of 4 nm has been used to fabricate ambipolar field-effect transistors (FETs) with ultrahigh carrier mobility of more than 18 300 and 8300 cm2/V·s for holes and electrons, respectively. Using a top-gate device geometry with 12 nm HfO2 being the gate oxide, the SBG CNT-based FET exhibits an almost perfect symmetric ambipolar transfer characteristic without any noticeable hysteresis, and a highly efficient frequency doubler is constructed based on this near perfect ambipolar FET. The SBG CNT-based frequency doubler is shown to be able to operate in a large signal mode where the input AC signal, being applied to the top-gate electrode, drives the FET operating alternatively in a p- or n-region yielding an output signal at the drain electrode with doubled frequency and high conversion efficiency. For an input AC signal of 1 kHz, detailed frequency power spectrum analysis shows that more than 95% of the output signal is concentrated at the doubled frequency at 2 kHz, with a gain of more than 0.15, and this represents the highest gain so far achieved in carbon-based devices, including graphene-based devices." @default.
- W2034908046 created "2016-06-24" @default.
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- W2034908046 date "2010-08-02" @default.
- W2034908046 modified "2023-10-18" @default.
- W2034908046 title "Large Signal Operation of Small Band-Gap Carbon Nanotube-Based Ambipolar Transistor: A High-Performance Frequency Doubler" @default.
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- W2034908046 doi "https://doi.org/10.1021/nl102111j" @default.
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