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- W2034985428 abstract "The equation is derived for the carrier concentration as a function of temperature and the concentrations of the acceptors and donors in a semiconductor. As a result, it is shown how these impurity concentrations may be found experimentally from a determination of the Hall coefficient as a function of the temperature. These methods are applied to the case of p-type silicon which is dealt with in some detail." @default.
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- W2034985428 date "1957-08-01" @default.
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- W2034985428 title "Determination of the impurity concentrations in a semiconductor from Hall coefficient measurements" @default.
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- W2034985428 doi "https://doi.org/10.1088/0508-3443/8/8/307" @default.
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