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- W2034987169 abstract "Microcrystalline silicon (μc-Si) thin films are widely used for silicon thin film solar cells, especially in the high performance tandem solar cells which comprise an amorphous silicon junction at the top and a μc-Si junction at the bottom. One of the major factors affecting the photovoltaic properties of μc-Si thin film solar cells of thin films is the quality of the μc-Si thin films. In this work, we investigated the effect of substrates on the crystallization characteristics and growth behaviors of μc-Si thin films grown by the plasma enhanced chemical vapor deposition method (PECVD), and found that substrates have a strong effect on the crystallization characteristics of μc-Si thin films. In addition, the growth rate of μc-Si thin films was also highly influenced by the substrates. Three types of substrates, quartz glass, single crystalline silicon and thermally oxidized single crystalline silicon, were used for growing μc-Si thin films from SiH4/H2 with a flow rate ratio 2:98 at different temperatures. Crystallization characteristics of these μc-Si thin films were studied by Raman scattering and X-ray diffraction techniques." @default.
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- W2034987169 date "2012-08-01" @default.
- W2034987169 modified "2023-10-18" @default.
- W2034987169 title "Influence of substrate on the growth of microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition" @default.
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- W2034987169 doi "https://doi.org/10.1016/j.mssp.2012.02.008" @default.
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