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- W2035070115 abstract "Step and Flash Imprint Lithography (SFIL) is an alternative lithography technique that enables patterning of sub-100 nm features at a cost that has the potential to be substantially lower than either conventional projection lithography or proposed next generation lithography techniques. SFIL is a molding process that transfers the topography of a rigid transparent template using a low-viscosity, UV-curable organosilicon solution at room temperature and with minimal applied pressure. Employing SFIL technology we have successfully patterned areas of high and low density, semi-dense and isolated lines down to 20 nm, and demonstrated the capability of layer-to-layer alignment. We have also confirmed the use of SFIL to produce functional optical devices including a micropolarizer array consisting of orthogonal 100 nm titanium lines and spaces fabricated using a metal lift-off process. This paper presents a demonstration of the SFIL technique for the patterning of the gate level in a functional MOSFET device." @default.
- W2035070115 created "2016-06-24" @default.
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- W2035070115 date "2003-06-13" @default.
- W2035070115 modified "2023-09-27" @default.
- W2035070115 title "Employing Step-and-Flash imprint lithography for gate-level patterning of a MOSFET device" @default.
- W2035070115 doi "https://doi.org/10.1117/12.490142" @default.
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