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- W2035142014 abstract "Phosphorus diffusion has been studied in relaxed Si1−xGex samples (x=0.11 and 0.19) and strained Si/Si1−xGex/Si heterostructures (x=0.08, 0.13, and 0.18). The diffusivity of P is found to increase with increasing Ge content, while the influence of compressive strain results in a decrease in diffusivity as compared to that in relaxed material. The effect of strain is found to be equivalent to an apparent activation energy of −13 eV per unit strain, where the negative sign indicates that the P diffusion is mediated by interstitials in Si1−xGex (x<0.20). This conclusion is also supported by an experiment utilizing injection of Si self-interstitials, which results in an enhanced P diffusion in strained Si1−xGex. Further, P is found to segregate into Si across Si/Si1−xGex interfaces and the segregation coefficient increases with increasing Ge concentration." @default.
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- W2035142014 date "2003-11-15" @default.
- W2035142014 modified "2023-09-30" @default.
- W2035142014 title "Diffusion of phosphorus in relaxed Si1−xGex films and strained Si/Si1−xGex heterostructures" @default.
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- W2035142014 doi "https://doi.org/10.1063/1.1622771" @default.
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