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- W2035174966 abstract "Abstract The epitaxial growth of aluminum nitride films on Al 2 O 3 (0 0 0 1) by sputtering is achieved using a 30 nm thick buffer layer of aluminum and titanium nitride. Both buffer layers facilitate epitaxial growth. In particular, an epitaxial film can be deposited at room temperature if the buffer layer is Al. Pole figures of X-ray diffraction elucidate the crystallinity of films." @default.
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- W2035174966 date "2003-05-01" @default.
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- W2035174966 title "Growth of aluminum nitride films at low temperature" @default.
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- W2035174966 doi "https://doi.org/10.1016/s0022-0248(03)00883-2" @default.
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