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- W2035243515 abstract "ABSTRACT The distributed Bragg reector (DBR) plays a major role in integrated optics. Because of the recent advances ofsilicon photonics and CMOS electronics in SOI platform, various types of DBR structures are being investigatedfor integrated optical couplers, lters, (de-)multiplexers, interleavers, Fabry-Perot micro-cavities, laser sources,etc. The rst order di raction gratings in SOI waveguide requires surface relief gratings of period = 225 nmfor a DBR response at = 1550 nm. Fabrication of such sub-micron gratings with a uniform period over alength of several mm is really a challenging issue. Here we report the realization of an eleventh order Bragggrating ( = 2.6 m, B 1564 nm, L = 2.62 mm) on the surface of single-mode rib waveguides. The DBRsand waveguide structures were de ned by conventional photolithography and subsequent reactive ion etchingprocesses. The waveguide end-facets were polished suitably before they were taken for characterizations usinga tunable laser source (tunability 10 pm) in our free-space waveguide coupling set-up. The characterizationresults of the fabricated DBRs showed a reectivity R = 88.32% and FWHM = 2.43 nm. Higher reectivityand narrower grating response can be achieved by further increasing the grating length. The waveguide loss hasbeen increased ( 0.5 dB/mm) because of the enhanced surface roughness during the RIE process for gratingfabrication. It can be reduced if conventional RIE is replaced by ICP RIE.Keywords: silicon photonics, DBR, silicon waveguides, integrated optics, lters, higher order gratings, siliconon insulator, di raction" @default.
- W2035243515 created "2016-06-24" @default.
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- W2035243515 date "2013-03-14" @default.
- W2035243515 modified "2023-09-23" @default.
- W2035243515 title "Highly efficient DBR in silicon waveguides with eleventh order diffraction" @default.
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- W2035243515 doi "https://doi.org/10.1117/12.2004071" @default.
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