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• W2035244824 startingPage "1092" @default.
• W2035244824 abstract "At a 1.2-nm equivalent oxide thickness, HfSi <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /Hf <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.7</sub> La <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.3</sub> ON n-MOSFETs showed an effective work function of 4.33 eV, a low threshold voltage of 0.18 V, and a peak electron mobility of 215 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /(Vldrs). These self-aligned and gate-first HfSi <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /Hf <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.7</sub> La <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.3</sub> ON n-MOSFETs were processed using standard ion implantation and 1000-degC rapid thermal annealing, making them fully compatible with current very large scale integration fabrication lines." @default.
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• W2035244824 date "2007-12-01" @default.
• W2035244824 modified "2023-09-23" @default.
• W2035244824 title "HfLaON n-MOSFETs Using a Low Work Function $ hbox{HfSi}_{x}$ Gate" @default.
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• W2035244824 doi "https://doi.org/10.1109/led.2007.909843" @default.
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