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- W2035254879 abstract "Abstract In this work metal/oxide/silicon (MOS) capacitors using SiOxNy and SiO2 films with different nitrogen concentrations as gate dielectrics were deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique, fabricated and characterized. These films were obtained through the variation of the N2O/SiH4 flow ratio (R) at low temperatures (∼320 °C). The refractive index results show that by varying the N2O/SiH4 flow ratio it is possible to obtain a precise control of this parameter in the 1.46–1.57 range. From the low- and high-frequency C–V curves, the interface state density (Dit), the effective charge density (Nss), dielectric constant (k), among others were extracted. Optimized properties were found for the capacitor with a low nitrogen concentration (∼8%) SiOxNy gate dielectric." @default.
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- W2035254879 date "2003-03-01" @default.
- W2035254879 modified "2023-09-25" @default.
- W2035254879 title "MOS capacitors with PECVD SiOxNy insulating layer" @default.
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- W2035254879 doi "https://doi.org/10.1016/s1044-5803(03)00083-4" @default.
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