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- W2035297211 abstract "We have introduced a new buffer material, neodymium copper oxide Nd2CuO4, to improve the initial epitaxy of YBa2Cu3Oy ultrathin films on yttrium stabilized ZrO2 (YSZ). This material has a stable tetragonal structure with lattice constants very similar to that of YBa2Cu3Oy. It behaves like an oxide semiconductor and is highly resistive. Unlike most buffer materials with the 123 structure, the structure and electric properties of the Nd2CuO4 film are not sensitive to the oxygen deficiency and it will not cause any degradation in superconductivity of the grown YBa2Cu3Oy films. We found that even with a very thin layer of Nd2CuO4 the interaction between YBa2Cu3Oy and YSZ could be efficiently blocked. Measurements by using XRD, rocking curve, and cross-sectional transmission electron microscopy (TEM) indicate that the crystallinity and initial epitaxy of YBa2Cu3Oy films can be significantly improved by such a Nd2CuO4 buffer layer. Good superconducting transitions and high critical current density have been obtained with the film thickness down to 10 nm. It has been also found that the Nd2CuO4 thin films always present a very smooth surface." @default.
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- W2035297211 date "2000-03-01" @default.
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- W2035297211 title "Enhanced initial epitaxy of YBa2Cu3Oy ultrathin films grown on YSZ substrates by using a new buffer layer of Nd2CuO4" @default.
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- W2035297211 doi "https://doi.org/10.1016/s0921-4534(99)00572-9" @default.
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