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- W2035435170 abstract "Plasma etching is an integral part of semiconductor integrated circuit (IC) processing and is widely used to producehigh-resolution patterns and to remove sacrificial layers. Bottom anti-reflective coatings (BARCs) under the resistabsorb light to minimize reflectivity during lithography and are typically opened during pattern transfer using plasmaetching. High etch selectivity is required in the BARC opening process to minimize resist loss to allow further substrateetching. Because the plasma etch process combines physical bombardment and chemical reaction, the factors affectingetch rate and selectivity are complex. The results are related to etch conditions and the chemical nature of polymer.This paper addresses plasma etch properties as they relate to polymer type and etch gas composition. Polyacrylate,polyester, and polymers containing nitrogen and halogens have been investigated. The research was carried out by aseries of designs of experiments (DOEs), which varied the flow rate of Ar, CF4, and O2 in plasma gas. The selectivity ofBARC to resist depends not only on the carbon content but also on the different ways polymer compositions andstructures respond to an oxidizing gas, a reducing gas, and plasma bombardment. Based on a polymer decompositionmechanism, we discuss what could happen physically and chemically during the polymer's exposure to the high-energyreactive plasmas. We also modified the Ohnishi parameter for the polymers containing nitrogen and halogen using ourpolymer decomposition theory. The contribution of nitrogen and halogen in the etch equation can be positive ornegative depending on the chemical properties of the plasma." @default.
- W2035435170 created "2016-06-24" @default.
- W2035435170 creator A5001888307 @default.
- W2035435170 creator A5019981473 @default.
- W2035435170 date "2008-03-14" @default.
- W2035435170 modified "2023-10-18" @default.
- W2035435170 title "Plasma etch properties of organic BARCs" @default.
- W2035435170 cites W1966201431 @default.
- W2035435170 cites W1969250849 @default.
- W2035435170 cites W1975954856 @default.
- W2035435170 cites W1984955056 @default.
- W2035435170 cites W1986735993 @default.
- W2035435170 cites W1995838088 @default.
- W2035435170 cites W2005380170 @default.
- W2035435170 cites W2009201618 @default.
- W2035435170 cites W2060508233 @default.
- W2035435170 cites W2091238092 @default.
- W2035435170 cites W2100160993 @default.
- W2035435170 cites W2145930691 @default.
- W2035435170 doi "https://doi.org/10.1117/12.772012" @default.
- W2035435170 hasPublicationYear "2008" @default.
- W2035435170 type Work @default.
- W2035435170 sameAs 2035435170 @default.
- W2035435170 citedByCount "1" @default.
- W2035435170 crossrefType "proceedings-article" @default.
- W2035435170 hasAuthorship W2035435170A5001888307 @default.
- W2035435170 hasAuthorship W2035435170A5019981473 @default.
- W2035435170 hasBestOaLocation W20354351702 @default.
- W2035435170 hasConcept C121332964 @default.
- W2035435170 hasConcept C192562407 @default.
- W2035435170 hasConcept C41008148 @default.
- W2035435170 hasConcept C49040817 @default.
- W2035435170 hasConcept C62520636 @default.
- W2035435170 hasConcept C82706917 @default.
- W2035435170 hasConceptScore W2035435170C121332964 @default.
- W2035435170 hasConceptScore W2035435170C192562407 @default.
- W2035435170 hasConceptScore W2035435170C41008148 @default.
- W2035435170 hasConceptScore W2035435170C49040817 @default.
- W2035435170 hasConceptScore W2035435170C62520636 @default.
- W2035435170 hasConceptScore W2035435170C82706917 @default.
- W2035435170 hasLocation W20354351701 @default.
- W2035435170 hasLocation W20354351702 @default.
- W2035435170 hasOpenAccess W2035435170 @default.
- W2035435170 hasPrimaryLocation W20354351701 @default.
- W2035435170 hasRelatedWork W2058676402 @default.
- W2035435170 hasRelatedWork W2329285141 @default.
- W2035435170 hasRelatedWork W2737498735 @default.
- W2035435170 hasRelatedWork W2744391499 @default.
- W2035435170 hasRelatedWork W2748952813 @default.
- W2035435170 hasRelatedWork W2898370298 @default.
- W2035435170 hasRelatedWork W2899084033 @default.
- W2035435170 hasRelatedWork W2902546961 @default.
- W2035435170 hasRelatedWork W4292492973 @default.
- W2035435170 hasRelatedWork W4313653414 @default.
- W2035435170 isParatext "false" @default.
- W2035435170 isRetracted "false" @default.
- W2035435170 magId "2035435170" @default.
- W2035435170 workType "article" @default.