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- W2035514710 abstract "We have systematically studied the effects of incorporation of Al in the embedding layers of self-organized InAs quantum dots (QDs) grown on GaAs(0 0 1) by molecular-beam epitaxy on their density and structural and optical properties. When using an In0.1AlxGa0.9−xAs lower embedding layer (x=0.001–0.1) we observe a large increase in QD density with increasing x. The increase is much larger than when increasing the In content in a conventional InxGa1−xAs (x=0–0.2) lower embedding layer. We attribute the differences to different nucleation mechanisms. Furthermore, introducing a thin InAlAs upper embedding layer results in strong 1.3 μm emission with a large energy separation between the ground and the first excited state transitions." @default.
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- W2035514710 date "2003-04-01" @default.
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- W2035514710 title "Aluminium incorporation for growth optimization of 1.3μm emission InAs/GaAs quantum dots by molecular beam epitaxy" @default.
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- W2035514710 doi "https://doi.org/10.1016/s0022-0248(02)02408-9" @default.
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