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- W2035544091 abstract "The Ti/HfO 2 /TiN-based system is a very promising candidate for Resistance change Random Access Memory (RRAM). By combining material science studies and integration in a Si CMOS technology, we succeeded to give quantitative insight in the resistive switching mechanism and to process a 4 kbit array with 1T1R RRAM devices. In particular, in-operando hard X-ray photoelectron spectroscopy allows to describe the resistive switching mechanism by a push-pull model of oxygen vacancies as a function of voltage polarity. Moreover, the characterization of integrated 600×600 nm2 TiN/Ti/HfO 2 /TiN 1T1R devices in the pulse-induced mode and the recent realization of a 4 kbit memory array have demonstrated promising performance for embedded non-volatile memory applications." @default.
- W2035544091 created "2016-06-24" @default.
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- W2035544091 date "2013-03-15" @default.
- W2035544091 modified "2023-10-15" @default.
- W2035544091 title "(Invited) HfO<sub>2</sub>-Based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays" @default.
- W2035544091 doi "https://doi.org/10.1149/05004.0021ecst" @default.
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