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- W2035676922 abstract "Optical lithography stays at 193nm with a numerical aperture of 1.35 for several more years before moving toEUV lithography. Utilization of 193nm lithography for 45nm and beyond forces the mask shop to producecomplex mask designs and tighter lithography specifications which in turn make process control moreimportant than ever. High yield with regards to chip production requires accurate process control.Critical Dimension Uniformity (CDU) is one of the key parameters necessary to assure good performance andreliable functionality of any integrated circuit. There are different contributors which impact the total waferCDU, mask CD uniformity, resist process, scanner and lens fingerprint, wafer topography, etc.In this paper, the wafer level CD metrology tool WLCD of Carl Zeiss SMS is utilized for CDU measurementsin conjunction with the CDC tool from Carl Zeiss SMS which provides CD uniformity correction. TheWLCD measures CD based on proven aerial imaging technology. The CDC utilizes an ultrafast femto-secondlaser to write intra-volume shading elements (Shade-In ElementsTM) inside the bulk material of the mask. Byadjusting the density of the shading elements, the light transmission through the mask is locally changed in amanner that improves wafer CDU when the corrected mask is printed.The objective of this study is to evaluate the usage of these two tools in a closed loop process to optimizeCDU of the mask before leaving the mask shop and to ensure improved intra-field CDU at wafer level.Mainly we present the method of operation and results for logic pattering by using these two tools." @default.
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- W2035676922 date "2012-06-30" @default.
- W2035676922 modified "2023-09-23" @default.
- W2035676922 title "A study of closed-loop application for logic patterning" @default.
- W2035676922 doi "https://doi.org/10.1117/12.978706" @default.
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