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- W2035695336 abstract "Enhancement-mode n-channel GaN MOSFETs with overlap gate structure using thick HfO2 as a gate insulator have been fabricated. The maximum transconductance of 45 mS/mm is seven times larger, to our knowledge, than the best-reported value of GaN MOSFETs with SiO2 gate oxide." @default.
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- W2035695336 date "2007-01-01" @default.
- W2035695336 modified "2023-09-23" @default.
- W2035695336 title "Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO2 as gate oxide" @default.
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- W2035695336 doi "https://doi.org/10.1049/el:20071814" @default.
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