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- W2035748416 abstract "Quantum-dot (QD) materials have shown great promise for THz photoconductive devices. The generation of THz radiation relies on the excitation of highly-mobile carriers with sub-picosecond lifetimes. The band structure of QD materials grown for such THz applications leads to a multitude of energy bands/levels [1], onto which carriers can be excited. Here we show for the first time that the lifetime of carriers excited into the GaAs barriers (λ=800 nm) is up to two orders of magnitude shorter than when these are excited resonantly within the QDs (λ=1245 nm). We also present annealed QD-structures which exhibit faster carrier lifetimes than as-grown ones for most pump conditions, a feature unreported so far. Furthermore, an increase of carrier lifetime with the incident pump power is also unveiled for both annealed and as-grown samples. This study has significant implications in the understanding and optimal use of QD materials for THz generation applications [2]." @default.
- W2035748416 created "2016-06-24" @default.
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- W2035748416 date "2013-05-01" @default.
- W2035748416 modified "2023-09-23" @default.
- W2035748416 title "Ultrafast carrier dynamics of surfactant-mediated-grown InAs/GaAs quantum-dot structures designed for THz applications" @default.
- W2035748416 cites W2015379240 @default.
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- W2035748416 doi "https://doi.org/10.1109/cleoe-iqec.2013.6801116" @default.
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