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- W2035758839 abstract "A novel AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) has been fabricated and demonstrated. The problems of conventional single heterojunction bipolar transistors (SHBTs) such as graded AlxGa1-xAx emitter and the precise alignment of emitter-base junction are avoided. The proposed HEBT device exhibits significant advantages as (i) ease of fabrication, (ii) extremely small collector offset voltage. The common-emmiter current gain up to 180 with an offset voltage about 80 mV has been obtained in the nonoptimized device. Furthermore, an interesting controllable S-shaped negative-differential-resistance (NDR) phenomenon is observed under reverse operation mode. Therefore, the proposed HEBT may be employed as a multiple-function device which provides the transistor and switch actions on the same wafer, simultaneously." @default.
- W2035758839 created "2016-06-24" @default.
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- W2035758839 date "1991-07-01" @default.
- W2035758839 modified "2023-10-17" @default.
- W2035758839 title "AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) prepared by molecular beam epitaxy" @default.
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- W2035758839 doi "https://doi.org/10.1016/0038-1101(91)90007-l" @default.
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